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Publications

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Book chapters


1. Materials science of defects in GaAs-based semiconductor lasers
K. Mukherjee, Reliability of Semiconductor Lasers and Optoelectronic Devices, Woodhead Publishing Series in Electronic and Optical Materials

2. Reliability of lasers on silicon substrates for silicon photonics
J. Norman, D. Jung, A. Liu, J Selvidge, K. Mukherjee, J.E. Bowers, R.W. Herrick, Reliability of Semiconductor Lasers and Optoelectronic Devices, Woodhead Publishing Series in Electronic and Optical Materials


Peer-reviewed journal articles


In the works


 

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
B.B. Haidet, J. Meyer, P. Reddy, E.T. Hughes, and K. Mukherjee (submitted)

 

Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation
L. Hughes, Z. Zhang, C. Jin, S. Meynell, B. Ye, W. Wu, Z. Wang, E. Davis, T. Mates, N. Yao, K. Mukherjee, A.B. Jayich(submitted)

 

Luminescence and structural degradation induced by dislocations in InAs quantum dot emitters grown on silicon
E.T. Hughes, G. Kusch, J. Selvidge, B. Bonef, J. Norman, C. Shang, J.E. Bowers, R.A. Oliver, K. Mukherjee (submitted)

2022


42. Optically-thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum
R. France, J. Selvidge, K. Mukherjee, and M. Steiner, Journal of Applied Physics 132, 184502 (2022) (Editor's pick)

41. Dislocation formation and filtering in III-V regrowth on GaAs bonded on Si
E.T. Hughes, M. Dumont, Y. Hu, D. Liang, R. Beausoleil, J.E. Bowers, K. Mukherjee, Crystal Growth & Design 22 (2022) 5852–5860

40. Epitaxial integration and defect structure of layered-SnSe films on PbSe/III-V templates
B.B. Haidet, E.T. Hughes, K. Mukherjee, Crystal Growth & Design 22 (2022) 3824−3833

2021


39.  Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
    J. Meyer, A.J. Muhowski, L.J. Nordin, E.T. Hughes, B.B. Haidet, D. Wasserman, K. Mukherjee, APL Materials  9 (2021) 111112

38. Kinetically limited misfit dislocations formed during post-growth cooling in III-V lasers on silicon
    K. Mukherjee, J. Selvidge, E.T. Hughes, J. Norman, C. Shang, R.W. Herrick, J.E. Bowers, Journal of Physics D: Applied Physics 54 (2021) 494001

37. Perspective on advances in quantum dot lasers and integration with Si photonic integrated circuits
    C. Shang, Y. Wan, J. Selvidge, E.T. Hughes, R.W. Herrick, K. Mukherjee, J. Duan, F. Grillot, W. Chow, J.E. Bowers, ACS Photonics 8 (2021) 2555–2566

36. Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures
    E.T. Hughes, B.B. Haidet, B. Bonef, W. Cai, K. Mukherjee, Physical Review Materials 5, 073402 (2021)

35. Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures
    J. Selvidge, E.T. Hughes, J. Norman, C. Shang, MJ Kennedy, M. Dumont, A. Netherton, Z. Zhang, R.W. Herrick, J.E. Bowers, K. Mukherjee, Applied Physics Letters 118 (2021) 192101

34. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
    C. Shang, E.T. Hughes, Y. Wan, M. Dumont, R. Koscica, J. Selvidge, R.W. Herrick, A.C. Gossard, K. Mukherjee, J.E. Bowers, Optica 8 (2021) 749-754

33. Interface structure and luminescence properties of epitaxial PbSe films on InAs (111)A
    B.B. Haidet, L.J. Nordin, A.J. Muhowski, K.D. Vallejo, E.T. Hughes, J. Meyer, P.J. Simmonds, D. Wasserman, K. Mukherjee, Journal of Vacuum Science and Technology A 39 (2021) 023404

32. Ferroelastic Hysteresis in Thin Films of Methylammonium Lead Iodide
    R.M. Kennard, C.J. Dahlman, R.A. DeCrescent, J.A. Schuller, K. Mukherjee, R. Seshadri, M.L. Chabinyc, Chemistry of Materials 33 (2021) 298–309

31. A pathway to thin GaAs virtual substrate on on-axis Si (001) with ultralow threading dislocation density
    C. Shang, J. Selvidge, E.T. Hughes, J. Norman, A.A. Taylor, A.C. Gossard, K. Mukherjee, and J.E. Bowers, Physica Status Solidi A 218 (2021) 2000402

2020


30. Controlling Facets and Defects of InP Nanostructures in Confined Epitaxial Lateral Overgrowth
    A. Goswami, S. Šuran Brunelli, B. Markman, A. Taylor, H-Y. Tseng, K. Mukherjee, M. Rodwell, J. Klamkin, Jonathan, C. Palmstrøm, Physical Review Materials 4(2020) 123403

29. Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
    S.A. Meynell, C.A. McClellan, L.B. Hughes, T.E. Mates, K. Mukherjee, and A.C. Bleszynski Jayich, Applied Physics Letters 117 (2020) 194001 (Editor's pick)

28. Defect Filtering for Thermal Expansion Induced Dislocations in III-V Lasers on Silicon
    J. Selvidge, J. Norman, E.T. Hughes, C. Shang, D. Jung, A.A. Taylor, MJ Kennedy, R.W. Herrick, J.E. Bowers, and K. Mukherjee, Applied Physics Letters 117 (2020) 122101 (Editor's pick)

27. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
    K. Mukherjee, J. Selvidge, D. Jung, J. Norman, A.A. Taylor, M. Salmon, A.Y. Liu, J.E. Bowers, and R.W. Herrick, Journal of Applied Physics. 128 (2020) 025703

26. Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces 
    B.B. Haidet, E.T. Hughes, K. Mukherjee, Physical Review Materials 4 (2020) 033402

25. Growth and Magnetotransport in Thin Film α-Sn on CdTe
    O. Vail, P. Taylor, P. Folkes, B. Nichols, B.B. Haidet, K. Mukherjee, G. de Coster, Physica Status Solidi B. 257 (2020) 1800513

2019


24. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering
    E.T. Hughes, R.D. Shah, K. Mukherjee, Journal of Applied Physics. 125 (2019) 165702 (Editor's pick)

23. Development of Lattice-Mismatched GaInAsP for Radiation Hardness
    R.M. France, P. Espinet-Gonzalez, B.B. Haidet, K. Mukherjee, H.L. Guthrey, H.A. Atwater, and D. Walker, IEEE Journal of Photovoltaics (2019)

22. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template
    Y. Hu, D. Liang, K. Mukherjee, Y. Li, C. Zhang, G. Kurczveil, X. Huang, R.G. Beausoleil, Light Science and Applications 8 (2019) 1–9

21. Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
    J. Selvidge, J. Norman, M.E. Salmon, E.T. Hughes, J.E. Bowers, R.W. Herrick, K. Mukherjee, Applied Physics Letters 115 (2019) 131102 (Featured article, Scilight)

20. Phase Stability and Diffusion in Lateral Heterostructures of Methyl Ammonium Lead Halide Perovskites
    R.M. Kennard, C.J. Dahlman, H. Nakayama, R.A. DeCrescent, J.A. Schuller, R. Seshadri, K. Mukherjee, M.L. Chabinyc, ACS Applied Materials and Interfaces. (2019)

19. Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them
    A. Rice, K. Park, E.T. Hughes, K. Mukherjee, K. Alberi, Physical Review Materials 3 (2019) 121201(R). (Rapid Communication)

18. Fast diffusion and segregation along threading dislocations in semiconductor heterostructures
    B. Bonef, R.D. Shah, K. Mukherjee, Nano Letters 19 (2019) 1428–1436

17. Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
    K. Mukherjee, M. Vaisman, P.G. Callahan, M.L. Lee, Journal of Crystal Growth. 512 (2019) 169–175

16. Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
    J.S. Lee, B. Shojaei, M. Pendharkar, M. Feldman, K. Mukherjee, C.J. Palmstrøm, Physical Review Materials 3, 014603 (2019)

15. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy
    D. Jung, J. Norman, Y. Wan, S. Liu, R. Herrick, J. Selvidge, K. Mukherjee, A.C. Gossard, J.E. Bowers, Physica Status Solidi (A). (2019) 1800602

2018


 

14. Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon
    P.G. Callahan, B.B. Haidet, D. Jung, G.G.E. Seward, K. Mukherjee, Physical Review Materials 2 (2018) 081601. (Rapid Communication)

 

13. Recombination activity of threading dislocations in GaInP influenced by growth temperature
    K. Mukherjee, C.H. Reilly, P.G. Callahan, G.G.E. Seward, Journal of Applied Physics 123 (2018) 165701

2017


 

12. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
    D. Jung, P.G. Callahan, B. Shin, K. Mukherjee, A.C. Gossard, J.E. Bowers, Journal of Applied Physics 122 (2017) 225703

Before starting the Mukherjee Group


11. Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast
    K. Mukherjee, B.A. Wacaser, S.W. Bedell, D.K. Sadana, Applied Physics Letters 110 (2017) 232101

10. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure
    K. Mukherjee, Y. Hayamizu, C.S. Kim, L.M. Kolchina, G.N. Mazo, S.Y. Istomin, S.R. Bishop, H.L. Tuller,  ACS Applied Materials and Interfaces 8 (2016) 34295–34302

9. Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers
    M. Vaisman, K. Mukherjee, T. Masuda, K.N. Yaung, E.A. Fitzgerald, M.L. Lee, IEEE Journal of Photovoltaics 6 (2016) 571–577

8. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
    K. Mukherjee, A.G. Norman, A.J. Akey, T. Buonassisi, E.A. Fitzgerald, Journal of Applied Physics 118 (2015) 115306

7. Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures
    K. Mukherjee, P.B. Deotare, E.A. Fitzgerald, Applied Physics Letters 106 (2015) 142109

6. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
    K. Mukherjee, D.A. Beaton, A. Mascarenhas, M.T. Bulsara, E.A. Fitzgerald, Journal of Crystal Growth 392 (2014) 74–80

5. Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials
    N.Y. Pacella, K. Mukherjee, M.T. Bulsara, E.A. Fitzgerald,  ECS Journal of Solid State Science and Technology 2 (2013) P324–P331 

4. Determination of the direct to indirect bandgap transition composition in AlxIn1−xP
    D.A. Beaton, T. Christian, K. Alberi, A. Mascarenhas, K. Mukherjee, E.A. Fitzgerald, Journal of Applied Physics 114 (2013) 203504

3. Amber-green light emitting diodes using order-disorder AlxIn1-xP heterostructures
    T. Christian, D. A. Beaton, K. Mukherjee, K. Alberi, E. A. Fitzgerald, A. Mascarenhas, Journal of Applied Physics 114, 074505 (2013)

2. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
    K. Mukherjee, D.A. Beaton, T. Christian, E.J. Jones, K. Alberi, A. Mascarenhas, M.T. Bulsara, E.A. Fitzgerald, Journal of Applied Physics 113 (2013) 183518

1. Electron transport in electrospun TiO2 nanofiber dye-sensitized solar cells
    K. Mukherjee, T. Teng, R. Jose, and S. Ramakrishna, Applied Physics Letters 95 (1), 012101 (2009)

 

Issued Patents


J. P. de Souza, Y. S. Lee, K. Mukherjee, and D. K. Sadana, “United States Patent: 10,581,109- Fabrication method of all solid-state thin film battery”, 3-Mar-2020.

S. W. Bedell, C.-W. Cheng, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 10,460,937 - Post-growth heteroepitaxial layer separation for defect reduction in heteroeptaxial films”, 29-Oct-2019.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 10,127,649 - Electron channeling pattern acquisition from small crystalline areas”, 13-Nov-2018.

N. Li, Q. Li, K. Mukherjee, D. K. Sadana, and G. G. Shahidi, “United States Patent: 10,043,941 – Light emitting diode having improved quantum efficiency at low injection current”, 07-Aug-2018.

J. P. de Souza, Y. S. Lee, K. Mukherjee, and D. K. Sadana, “United States Patent: 9,984,949 – Surface passivation having reduced interface defect density”, 29-May-2018.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,859,091- Automatic alignment for high throughput electron channeling contrast imaging”, 02-Jan-2018.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,741,532 - Multi-beam electron microscope for electron channeling contrast imaging of semiconductor material”, 22-Aug-2017.

S. W. Bedell, R. T. Mo, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,739,728 - Automatic defect detection and classification for high throughput electron channeling contrast imaging”, 22-Aug-2017.