Understanding semiconductor crystal growth, defects, and integration for electronics and optoelectronics
Group openings: We have 1-2 openings for graduate students each year. If you are interested in semiconductor synthesis and defect phenomena and are already admitted to a Stanford MS or PhD program, we would love to hear from you.
Community Impact Award
Tri Nguyen is one of Stanford's 2024 Community Impact Award recipients for his work with the Stanford Materials Research Society. The campus-wide awards are given to a select few students who "fostered a sense of belonging and inspired enthusiasm among fellow grad students, enhancing the Stanford community through their exemplary leadership of a student organization, creation of an event or program, or other unique campus contribution." Congratulations Tri!!
Two best student talks at the 36th North American Molecular Beam Epitaxy conference
Our group went to NAMBE. Pooja Reddy and Eamonn Hughes have won two out of three conference wide student awards on their presentations - "Epitaxial Growth of PbSnSe Ternary Alloys on III-V Substrates" and "Controlling Dislocation Formation and Dynamics in GaAs-Based Films on Silicon via Indium Alloying", respectively. Leland Nordin and Jarod Meyer presented on mid-IR light emission from PbSnSe and PbGeSe materials grown by MBE. Congrats!
New paper on characterizing threading dislocations in diamond
Haoxue, Eveline, and Tri use new microscopy and microanalysis tools to rapidly and accurately characterize dislocations in diamond films. This work is in close collaboration with researchers at RMIT and Quantum Brilliance.
Paper on 3D crystalline- 2D crystalline phase transitions
Pooja Reddy leads work in collaboration with several group members showing how MBE grown films of PbSnSe bypass phase stability rules set in the bulk. Importantly, she shows that certain compositions can switch between 3D and 2D/layered structures with no change in composition, and stays epitaxially registered to the substrate in both states! We are excited to harness these structural changes in future work on electronic and optical phase-change devices.